SAVANTIC 2SC2934

SavantIC Semiconductor
Product Specification
2SC2934
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·High VCEO
·Low COB
APPLICATIONS
·For TV video output amplification
PINNING see Fig.2
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
7
V
0.2
A
12.5
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC2934
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
1.5
V
VCEsat
Collector-emitter saturation voltage
IC=50mA ;IB=5m A
V(BR)CBO
Collector-base breakdown voltage
IC=10µA;IE=0
300
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=100µA; IB=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10µA; IC=0
7
V
ICBO
Collector cut-off current
VCB=200V;IE=0
0.1
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
µA
hFE
DC current gain
IC=50mA ; VCE=10V
Transition frequency
IC=20mA ; VCE=20V
fT
2
50
300
80
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SC2934