SavantIC Semiconductor Product Specification 2SC1079 2SC1080 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2SA679/680 ·High power dissipation APPLICATIONS ·For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=? ) SYMBOL PARAMETER CONDITIONS 2SC1079 VCBO Collector-base voltage 120 Open base 2SC1080 VEBO Emitter-base voltage V 100 2SC1079 Collector-emitter voltage UNIT 120 Open emitter 2SC1080 VCEO VALUE V 100 Open collector 5 V IC Collector current 12 A IE Emitter current -12 A PC Collector power dissipation 100 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? TC=25? SavantIC Semiconductor Product Specification 2SC1079 2SC1080 Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC1079 V(BR)CEO Collector-emitter breakdown voltage MAX UNIT IC=0.1A ;IB=0 V 100 Emitter-base breakdown voltage IE=10mA ;IC=0 Collector-emitter saturation voltage IC=10A; IB=1A 3.0 V VBE Base-emitter on voltage IC=10A ; VCE=5V 2.5 V ICBO Collector cut-off current VCB=50V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=2A ; VCE=5V 40 hFE-2 DC current gain IC=7A ; VCE=5V 15 Transition frequency IC=2A ; VCE=5V VCEsat fT u TYP. 120 2SC1080 V(BR)EBO MIN hFE-1 Classifications R Y 40-80 70-140 2 5 V 140 4 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1079 2SC1080 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3