SAVANTIC 2SC2485

SavantIC Semiconductor
Product Specification
2SC2485
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1061
·High collector power dissipation
APPLICATIONS
·High power audio frequency amplifier
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
6
A
ICP
Collector current (Pulse)
10
A
PC
Collector power dissipation
70
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC2485
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=0.4A
2.0
V
VBE
Base-emitter on voltage
IC=4A;VCE=5V
1.8
V
ICBO
Collector cut-off current
VCB=100V; IE=0
50
µA
IEBO
Emitter cut-off current
VEB=3V; IC=0
50
µA
hFE-1
DC current gain
IC=0.2A ; VCE=5V
20
hFE-2
DC current gain
IC=1A ; VCE=5V
40
hFE-3
DC current gain
IC=4A ; VCE=5V
20
Transition frequency
IC=0.5A ; VCE=5V
fT
CONDITIONS
hFE-2 Classifications
R
Q
P
40-80
60-120
100-200
2
MIN
TYP.
MAX
100
UNIT
V
200
20
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SC2485