SAVANTIC 2SC1140

SavantIC Semiconductor
Product Specification
2SC1140
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor controls
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=? )
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
800
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
15
A
150
W
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
200
?
Tstg
Storage temperature
-65~200
?
VALUE
UNIT
1.0
? /W
Tmb=25?
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
Thermal resistance from junction to mounting base
SavantIC Semiconductor
Product Specification
2SC1140
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
400
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=8A; IB=1.6A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=8A; IB=1.6A
1.6
V
ICBO
Collector cut-off current
VCB=800V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
15
50
hFE-2
DC current gain
IC=7.5A ; VCE=5V
10
25
Transition frequency
IC=1A ; VCE=5V
fT
CONDITIONS
2
MIN
TYP.
10
MAX
UNIT
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC1140