SavantIC Semiconductor Product Specification 2SC3058A Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V 30 A 200 W IC Collector current PT Total power dissipation Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification 2SC3058A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 450 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 600 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=20A; IB=4A 1.0 V VBE(sat) Base-emitter saturation voltage IC=20A; IB=4A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE-1 DC current gain IC=1A ; VCE=5V 15 50 hFE-2 DC current gain IC=20A ; VCE=5V 10 40 Transition frequency IC=4A ; VCE=10V 30 MHz Collector output capacitance IE=0 ; VCB=10V;f=1MHz 420 pF fT COB CONDITIONS 2 MIN TYP. MAX UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC3058A