SavantIC Semiconductor Product Specification 2N5157 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·Switching regulator ·Inverters ·Solenoid and relay drivers ·Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 700 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V 3.5 A 100 W IC Collector current PT Total power dissipation Tj Junction temperature 165 Tstg Storage temperature -65~200 Tc=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification 2N5157 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.5A 1.2 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=700V; IE=0 TC=125 0.2 2.0 mA ICEO Collector cut-off current VCE=500V; IB=0 5.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=1A ; VCE=5V Transition frequency IC=1A ; VCE=10V;f=5.0MHz fT 2 500 UNIT V 30 90 2.8 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2N5157