SavantIC Semiconductor Product Specification 2SC1185 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·High breakdown voltage :VCEO=250V(min) APPLICATIONS ·For voltage regulator,inverter,switching mode power supply applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=? ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 5 V 0.7 A 50 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? TC=25? SavantIC Semiconductor Product Specification 2SC1185 Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 250 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=100mA 1.0 V VBEsat Base-emitter saturation voltage IC=500mA; IB=100mA 1.5 V ICBO Collector cut-off current VCB=200V;IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE DC current gain IC=0.4A ; VCE=10V 2 MIN 40 TYP. MAX 200 UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SC1185