SAVANTIC 2SC1185

SavantIC Semiconductor
Product Specification
2SC1185
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
·High breakdown voltage
:VCEO=250V(min)
APPLICATIONS
·For voltage regulator,inverter,switching
mode power supply applications.
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=? )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
250
V
VEBO
Emitter-base voltage
Open collector
5
V
0.7
A
50
W
IC
Collector current
PD
Total power dissipation
Tj
Junction temperature
150
?
Tstg
Storage temperature
-55~150
?
TC=25?
SavantIC Semiconductor
Product Specification
2SC1185
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA; IB=0
250
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=500mA; IB=100mA
1.0
V
VBEsat
Base-emitter saturation voltage
IC=500mA; IB=100mA
1.5
V
ICBO
Collector cut-off current
VCB=200V;IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE
DC current gain
IC=0.4A ; VCE=10V
2
MIN
40
TYP.
MAX
200
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SC1185