SavantIC Semiconductor Product Specification 2SC1501 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·High breakdown voltage ·Large power dissipation APPLICATIONS ·For medium power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 0.1 A ICM Collector current-peak 0.15 A PC Collector power dissipation 10 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC1501 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=100µA;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=100µA; IC=0 5 V Collector-emitter saturation voltage IC=100mA IB=10m A 5.0 V VBE Base-emitter on voltage IC=50mA ; VCE=10V 1.2 V hFE-1 DC current gain IC=10mA ; VCE=10V 30 hFE-2 DC current gain IC=50mA ; VCE=10V 30 ICBO Collector cut-off current VCB=300V ; IE=0 COB Output capacitance IE=0; VCB=30V;f=1MHz 8 pF fT Transition frequency IE=20mA ; VCB=30V 55 MHz VCEsat hFE-2 classifications P Q R S 30-60 50-100 80-150 100-200 2 200 100 µA SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SC1501