SAVANTIC 2SB1339

SavantIC Semiconductor
Product Specification
2SB1339
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·High DC current gain
·Low saturation voltage
·DARLINGTON
APPLICATIONS
·For low frequency power amplifier and
power driver applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector -emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-6
A
ICM
Collector current-peak
-10
A
PC
Collector power dissipation
Ta=25
2
TC=25
40
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB1339
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-5mA; IB=0
-120
V
V(BR)CBO
Collector-base breakdown voltage
IC=-50µA; IE=0
-120
V
VCEsat
Collector-emitter saturation voltage
IC=-3A ;IB=-6mA
-1.5
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-100
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-3.0
mA
hFE
DC current gain
IC=-2A ; VCE=-3V
fT
Transition frequency
IC=-0.5A ; VCE=-5V
12
MHz
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
70
pF
2
MIN
TYP.
2000
MAX
UNIT
20000
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm)
3
2SB1339