SavantIC Semiconductor Product Specification 2SC1569 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High breakdown voltage ·High transition frequency APPLICATIONS ·For color TV chroma output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V 0.2 A IC Collector current PC Collector power dissipation Ta=25 1.5 TC=25 12.5 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC1569 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=10µA ;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10µA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=100mA ;IB=20mA 1.0 V VBEsat Base-emitter saturation voltage IC=100mA ;IB=20mA 1.2 V ICBO Collector cut-off current VCB=100V;IE=0 1.0 µA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 µA hFE DC current gain IC=50mA ; VCE=10V COB Output capacitance IE=0; VCB=10V;f=1MHz fT Transition frequency IC=30mA ; VCE=10V 2 40 170 65 40 pF MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC1569