SAVANTIC 2SC1108

SavantIC Semiconductor
Product Specification
2SC1108
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High breakdown voltage :VCEO=100V
·High current :4A
APPLICATIONS
·For power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25? )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
5
V
4
A
40
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
?
Tstg
Storage temperature
-55~150
?
TC=25?
SavantIC Semiconductor
Product Specification
2SC1108
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA; IB=0
100
V
V(BR)EBO
Emitter-base breakdown votage
IE=1mA; IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=3A;IB=0.3 A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=3A;IB=0.3 A
2.0
V
ICBO
Collector cut-off current
VCB=100V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=1A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=12V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
2
MIN
TYP.
100
UNIT
320
10
25
MAX
MHz
pF
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SC1108