SavantIC Semiconductor Product Specification 2SC1610 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For high speed power switching applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V 10 A 100 W IC Collector current PT Total power dissipation Tj Junction temperature 175 Tstg Storage temperature -55~175 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 1.17 /W SavantIC Semiconductor Product Specification 2SC1610 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=1m A; IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=10 A;IB=1 A 1.0 V VBEsat Base-emitter saturation voltage IC=10 A;IB=1 A 2.0 V ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA ICEO Collector cut-off current VCE=60V; IB=0 1.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=5V 2 MIN 30 TYP. MAX 160 UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC1610