SavantIC Semiconductor Product Specification BU536 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ·Fast switching speed APPLICATIONS ·For color TV horizontal deflection circuits. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1100 V VCEO Collector-emitter voltage Open base 480 V VEBO Emitter-base voltage Open collector 7 V 8 A IC Collector current ICM Collector current-peak tp<5ms 15 A PT Total power dissipation TC=25 62 W Tj Junction temperature 175 Tstg Storage temperature -65~175 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification BU536 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0; 480 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0; 7 V VCEsat Collector-emitter saturation voltage IC=4A;IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=4A;IB=0.8A 1.5 V ICBO Collector cut-off current VCB=1100V;IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V;IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 hFE-2 DC current gain IC=4A ; VCE=5V 6.5 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BU536