SAVANTIC 2SC2358

SavantIC Semiconductor
Product Specification
2SC2358
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage,high speed
APPLICATIONS
·Designed for switching-mode power
supplies ,CRT scanning,inverters,
and other industrial applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1000
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
10
A
150
W
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
200
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
MAX
UNIT
1.17
/W
SavantIC Semiconductor
Product Specification
2SC2358
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=10mA; IB=0
V(BR)EBO
Emitter-base breakdown voltage
IE=1m A;IC=0
VCEsat
Collector-emitter saturation voltage
IC=5 A;IB=1 A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=5 A;IB=1 A
1.5
V
ICBO
Collector cut-off current
VCB=1000V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE
DC current gain
IC=5A ; VCE=5V
2
MIN
TYP.
MAX
UNIT
800
V
7
V
15
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC2358