SAVANTIC 2SC2794

SavantIC Semiconductor
Product Specification
2SC2794
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Low collector saturation voltage
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter -base voltage
Open collector
5
V
IC
Collector current (DC)
2
A
ICM
Collector current-Peak
6
A
PC
Collector power dissipation
25
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
SavantIC Semiconductor
Product Specification
2SC2794
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=1A; IB=0.1A
0.6
V
VBE
Base-emitter on voltage
IC=1A ; VCE=2V
1.3
V
ICBO
Collector cut-off current
VCB=60V; IE=0
100
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1
mA
hFE-1
DC current gain
IC=150mA ; VCE=2V
50
hFE-2
DC current gain
IC=1A ; VCE=2V
25
Transition frequency
IC=100mA; VCE=5V
fT
CONDITIONS
2
MIN
TYP.
MAX
60
UNIT
V
40
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC2794