SavantIC Semiconductor Product Specification BD234 BD236 BD238 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type BD233/235 /237 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD234 VCBO VCEO Collector-base voltage Collector-emitter voltage BD236 Open emitter Emitter -base voltage IC -60 BD238 -100 BD234 -45 BD236 UNIT -45 Open base BD238 VEBO VALUE -60 V V -80 Open collector -5 V Collector current (DC) -2 A ICM Collector current-Peak -6 A PC Collector power dissipation 25 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification BD234 BD236 BD238 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage Base-emitter on voltage VBE CONDITIONS MAX UNIT IC=-1A; IB=-0.1A -0.6 V IC=-1A ; VCE=-2V -1.3 V BD234 VCEO(SUS) Collector-emitter sustaining voltage BD236 Collector cut-off current IC=-0.1A; IB=0 V -60 -80 BD234 VCB=-45V; IE=0 BD236 VCB=-60V; IE=0 BD238 VCB=-100V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-150mA ; VCE=-2V 40 hFE-2 DC current gain IC=-1A ; VCE=-2V 25 Transition frequency IC=-250mA; VCE=-10V 3 fT TYP. -45 BD238 ICBO MIN 2 -100 µA -1 mA MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BD234 BD236 BD238