SavantIC Semiconductor Product Specification BD439 BD441 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type BD440,BD442 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD439 VCBO Collector-base voltage 60 Open base BD441 VEBO Emitter -base voltage IC V 80 BD439 Collector-emitter voltage UNIT 60 Open emitter BD441 VCEO VALUE V 80 Open collector 5 V Collector current (DC) 4 A ICM Collector current-Peak 7 A IB Base current 1 A PC Collector power dissipation 36 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification BD439 BD441 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A VBE-1 Base-emitter on voltage IC=10mA ; VCE=5V VBE-2 Base-emitter on voltage IC=2A ; VCE=1V VCEO(SUS) ICBO ICES Collector-emitter sustaining voltage CONDITIONS BD439 hFE-1 DC current gain hFE-3 DC current gain BD441 V V V V 80 BD439 VCB=60V; IE=0 BD441 VCB=80V; IE=0 BD439 VCE=60V; VBE=0 BD441 VCE=80V; VBE=0 VEB=5V; IC=0 100 µA 100 µA 1 mA 20 IC=10mA ; VCE=5V 130 15 IC=0.5A ; VCE=1V BD439 40 140 25 IC=2A ; VCE=1V BD441 Transition frequency 0.8 60 BD441 DC current gain UNIT IC=0.1A; IB=0 BD439 hFE-2 MAX 1.5 Collector cut-off current Emitter cut-off current TYP. 0.58 Collector cut-off current IEBO fT MIN 15 IC=250mA; VCE=1V 2 3 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BD439 BD441