SavantIC Semiconductor Product Specification 2SC3686 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·High reliability ·Fast speed APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 7 A ICP Collector current-pulse 16 A PC Collector power dissipation 120 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3686 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.2A 5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1.2A 1.5 V ICES Collector cut-off current VCE=1500V; RBE=0 1 mA IEBO Emitter cut-off current VEB=4V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V 3 µs 0.2 µs 800 UNIT V 8 Switching times tstg Storage time IC=4A; VCC=5V IB1=0.8A; IB2=-1.6A tf Fall time 0.1 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SC3686 SavantIC Semiconductor Product Specification 2SC3686 Silicon NPN Power Transistors 4