SAVANTIC 2SC4928

SavantIC Semiconductor
Product Specification
2SC4928
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PL package
·High speed switching
·High breakdown voltage,high current
APPLICATIONS
·Character display horizontal deflection
output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
6
V
Collector current
15
A
Collector surge current
20
A
150
W
IC
IC(surge)
PC
Collector power dissipation
TC=25
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SC4928
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR )CEO
Collector-emitter breakdown voltage
IC=10mA; RBE=9
V(BR )EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat
Collector-emitter saturation voltage
IC=12A ;IB=3A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=12A ;IB=3A
1.5
V
ICES
Collector cut-off current
VCB=1500V; RBE=0
500
µA
IEBO
Emitter cut-off current
VEB=6V; IC=0
500
µA
hFE
DC current gain
IC=1A ; VCE=5V
38
Fall time
IC=8A ;IB1=1.4A;IB2?-2.5A
fH=31.5kHz
0.5
tf
CONDITIONS
2
MIN
TYP.
MAX
UNIT
800
V
6
V
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
2SC4928