SAVANTIC 2SC4020

SavantIC Semiconductor
Product Specification
2SC4020
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High breakdown voltage
: VCBO=900V(Min)
·Wide area of safe operation
APPLICATIONS
·For switching regulator and general
purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
900
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
3
A
ICM
Collector current-peak
6
A
IB
Base current
1.5
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC4020
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=0.7A; IB=0.14A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=0.7A; IB=0.14A
1.2
V
ICBO
Collector cut-off current
VCB=800V ;IE=0
100
µA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
µA
hFE
DC current gain
IC=0.7A ; VCE=4V
fT
Transition frequency
IE=-0.3A ; VCE=12V
6
MHz
COB
Output capacitance
f=1MHz ; VCB=10V
40
pF
800
UNIT
V
10
30
Switching times
ton
Turn-on time
tstg
Storage time
tf
VCC=250V; IC=0.7A
IB1=0.1A;IB2=-0.35A;
RL=357B
Fall time
2
1.0
µs
5.0
µs
1.0
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SC4020