SavantIC Semiconductor Product Specification 2SC4139 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 15 A ICP Collector current-pulse 30 A IB Base current 5 A PC Collector power dissipation 120 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC4139 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A 0.5 V VBEsat Base-emitter saturation voltage IC=8A; IB=1.6A 1.3 V ICBO Collector cut-off current VCB=500V ;IE=0 100 µA IEBO Emitter cut-off current VEB=10V; IC=0 100 µA hFE DC current gain IC=8A ; VCE=4V Transition frequency IE=-1.5A ; VCE=12V 10 MHz Collector output capacitance f=1MHz ; VCB=10V 85 pF fT COB CONDITIONS MIN TYP. MAX 400 UNIT V 10 30 Switching times ton Turn-on time tstg Storage time tf IC=8A;IB1=0.8A; IB2=-1.6A;RL=25@ VCC=200V Fall time 2 1.0 µs 3.0 µs 0.5 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SC4139 SavantIC Semiconductor Product Specification 2SC4139 Silicon NPN Power Transistors 4