SavantIC Semiconductor Product Specification 2SC4110 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Fast switching speed ·Wide area of safe operation ·High voltage,high reliability APPLICATIONS ·For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 25 A ICP Collector current-peak 40 A IB Base current 8 A PC Collector power dissipation TC=25 160 Ta=25 2.5 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC4110 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=; 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=16A; IB=3.2A 0.8 V VBE(sat) Base-emitter saturation voltage IC=16A; IB=3.2A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=3.2A ; VCE=5V 15 hFE-2 DC current gain IC=16A ; VCE=5V 10 hFE-3 DC current gain IC=10mA ; VCE=5V 10 fT Transition frequency IC=3.2A ; VCE=10V 20 MHz Cob Output capacitance IE=0; VCB=10V,f=1MHz 300 pF 50 Switching times ton Turn-on time ts Storage time tf Fall time IC=20A; IB1=4A;IB2=-8A RL=10B;VCC=200V 2 0.5 µs 2.5 µs 0.3 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SC4110