SavantIC Semiconductor Product Specification 2SC4510 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage ,high speed switching ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC convertors ·Solid state relay ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 15 A IB Base current 5 A PC Collector power dissipation 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX UNIT 1.56 /W SavantIC Semiconductor Product Specification 2SC4510 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 500 V VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0 400 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 0.8 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.2 V ICBO Collector cut-off current VCB=450V; IE=0 100 µA IEBO Emitter cut-off current VEB=10V; IC=0 100 µA hFE DC current gain IC=2A ; VCE=5V 25 65 Switching times ton Turn-on time tstg Storage time tf IC=7.5A;RL=20B IB1=0.75A; IB2=-1.5A Pw = 20µs; DutyC2% Fall time 2 1.0 µs 2.5 µs 0.5 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC4510 SavantIC Semiconductor Product Specification 2SC4510 Silicon NPN Power Transistors 4