SavantIC Semiconductor Product Specification 2SC3317 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A IB Base current 2 A PC Collector dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 3.13 /W SavantIC Semiconductor Product Specification 2SC3317 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 400 V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IB=0 7 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 1.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 1.5 V ICBO Collector cut-off current VCB=500V ;IE=0 1 mA IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE DC current gain IC=2A ; VCE=5V 0.50 µs 1.50 µs 0.15 µs V 10 Switching times ton Turn-on time tstg Storage time tf IC=2.5AIB1=0.5A; IB2=-1A;RL=60A Pw=20µs ;DutyB2% Fall time 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC3317 SavantIC Semiconductor Product Specification 2SC3317 Silicon NPN Power Transistors 4