SavantIC Semiconductor Product Specification 2SC3866 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High speed switching ·High voltage ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 3 A IB Base current 1 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 3.0 UNIT /W SavantIC Semiconductor Product Specification 2SC3866 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA , IE=0 900 V V(BR)EBO Emitter-base breakdown voltage IE=1mA , IC=0 10 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.2A 1.5 V ICBO Collector cut-off current VCB=900V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=10V; IC=0 1.0 mA hFE DC current gain IC=1A ; VCE=5V 1.0 µs 4.0 µs 0.8 µs 10 Switching times ton Turn-on time ts Storage time tf Fall time IC=2A; IB1=0.4A IB2=-0.8A;RL=150A Pw=20µs,DutyB2% 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC3866 SavantIC Semiconductor Product Specification 2SC3866 Silicon NPN Power Transistors 4