SavantIC Semiconductor Product Specification 2SC5249 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage switchihg transistor APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-peak 6 A IB Base current 1.5 A PC Collector power dissipation 35 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC5249 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=10mA; RBE=7 VCEsat Collector-emitter saturation voltage IC=1A;IB=0.2A 0.5 V VBEsat Base-emitter saturation voltage IC=1A;IB=0.2A 1.2 V ICBO Collector cut-off current VCB=600V; IE=0 100 µA IEBO Emitter cut-off current VEB=7V; IC=0 100 µA hFE DC current gain IC=1A ; VCE=4V fT Transition frequency IE=-0.3A ; VCE=12V 6 MHz COB Output capacitance VCB=10V;f=1MHz 50 pF 600 UNIT V 20 40 Switching times ton tstg tf Turn-on time Storage time IC=1A;IB1=0.1A; IB2=-0.1A; RL=200A VCC=200V Fall time 2 1.0 µs 19 µs 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC5249 SavantIC Semiconductor Product Specification 2SC5249 Silicon NPN Power Transistors 4