SavantIC Semiconductor Product Specification 2SC4517 2SC4517A Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SC4517 VCBO Collector-base voltage VALUE UNIT 900 Open emitter 2SC4517A V 1000 VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector 550 V 7 V IC Collector current 3 A ICM Collector current-pulse 6 A IB Base current 1.5 A PC Collector power dissipation 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC4517 2SC4517A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A 0.5 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.2A 1.2 V ICBO Collector cut-off current VCB=800V; IE=0 100 µA IEBO Emitter cut-off current VEB=7V; IC=0 100 µA hFE DC current gain IC=1A ; VCE=4V COB Output capacitance IE=0; VCB=10V;f=1MHz 35 pF fT Transition frequency IE=-0.25A ; VCE=12V 6 MHz 550 UNIT V 10 30 Switching times ton Turn-on time ts Storage time tf Fall time IC=1.0A IB1=0.15A IB2=-0.45A VCC=250V ,RL=250B 2 0.7 µs 4.0 µs 0.5 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC4517 2SC4517A SavantIC Semiconductor Product Specification 2SC4517 2SC4517A Silicon NPN Power Transistors 4