SavantIC Semiconductor Product Specification 2SC4662 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2 A PC Collector dissipation 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC4662 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.3A 0.5 V VBEsat Base-emitter saturation voltage IC=1.5A ;IB=0.3A 1.3 V ICBO Collector cut-off current VCB=500V; IE=0 100 µA IEBO Emitter cut-off current VEB=10V; IC=0 100 µA hFE DC current gain IC=1.5A ; VCE=4V COB Output capacitance IE=0; VCB=10V;f=1MHz 30 pF fT Transition frequency IE=-0.3A ; VCE=12V 20 MHz 400 UNIT V 10 30 Switching times ton Turn-on time ts Storage time tf Fall time IC=1.5A; IB1=0.15A IB2=-0.3A VCC=200V ,RL=133> 2 1.0 µs 2.5 µs 0.5 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC4662 SavantIC Semiconductor Product Specification 2SC4662 Silicon NPN Power Transistors 4