SavantIC Semiconductor Product Specification 2SD1135 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB859 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A ICM Collector current-peak 8 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -45~150 TC=25 SavantIC Semiconductor Product Specification 2SD1135 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=9 80 V V(BR)EBO Emitter-base breakdown votage IE=10µA; IC=0 5 V Collector-emitter saturation voltage IC=2 A;IB=0.2 A 2.0 V VBE Base-emitter voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=80V; IE=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 60 hFE-2 DC current gain IC=0.1A ; VCE=5V 35 Cob Collector output capacitance IC=0; VCB=20V;f=1MHz 40 pF Transition frequency IC=0.5A ; VCE=5V 10 MHz VCEsat fT CONDITIONS hFE-1 classifications B C 60-120 100-200 2 MIN TYP. MAX UNIT 200 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SD1135 SavantIC Semiconductor Product Specification 2SD1135 Silicon NPN Power Transistors 4