SAVANTIC 2SD234

SavantIC Semiconductor
Product Specification
2SD234
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SB434
APPLICATIONS
·For low frequency power amplifier
and switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
50
V
VEBO
Emitter-base voltage
Open collector
6
V
3
A
IC
Collector current
PC
Collector power dissipation
1.5
W
TC=25
25
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD234
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ,IB=0
50
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ,IE=0
60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ,IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.3A
1.2
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=40V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=4V; IC=0
10
µA
hFE
DC current gain
IC=0.5A ; VCE=1V
COB
Output capacitance
IE=0 ; VCB=10V,f=1MHz
90
pF
fT
Transition frequency
IC=0.5A ; VCE=10V
3
MHz
hFE Classifications
R
O
Y
40-80
70-140
120-240
2
MIN
TYP.
40
MAX
UNIT
240
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SD234