SAVANTIC 2SD1940

SavantIC Semiconductor
Product Specification
2SD1940
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·Wide area of safe operation
APPLICATIONS
·85V/6A, AF 25 to 30W output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
85
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
6
A
ICM
Collector current-peak
10
A
PC
Collector dissipation
25
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD1940
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ;RBE=8
85
V
V(BR)CBO
Collector-base breakdown voltage
IC=5mA ;IE=0
100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=5mA ;IC=0
6
V
Collector-emitter saturation voltage
IC=4A ;IB=0.4A
2.0
V
VBE
Base-emitter on voltage
IC=1A;VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=40V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
60
hFE-2
DC current gain
IC=3A ; VCE=5V
20
Transition frequency
IC=1A ; VCE=5V
15
MHz
Collector output capacitance
f=1MHz;VCB=10V
110
pF
0.28
µs
3.60
µs
0.50
µs
VCEsat
fT
COB
CONDITIONS
MIN
TYP.
MAX
UNIT
320
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=0.5A; IB1=-IB2=50mA
VCC=20V ,RL=40B
hFE-1 Classifications
D
E
F
60-120
100-200
160-320
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD1940
SavantIC Semiconductor
Product Specification
2SD1940
Silicon NPN Power Transistors
4