SavantIC Semiconductor Product Specification 2SB775 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SD895 ·Wide area of safe operation ·Large current capability APPLICATIONS ·85V/6A, AF 35W output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -85 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -6 A ICM Collector current-peak -10 A PC Collector power dissipation 60 W Tj Junction temperature 150 Tstg Storage temperature -40~150 TC=25 SavantIC Semiconductor Product Specification 2SB775 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=> -85 V V(BR)CBO Collector-base breakdown voltage IC=-5mA ;IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA ;IC=0 -6 V Collector-emitter saturation voltage IC=-4A ;IB=-0.4A VBE Base-emitter on voltage ICBO VCEsat CONDITIONS MIN TYP. UNIT -2.0 V IC=-1A;VCE=-5V -1.5 V Collector cut-off current VCB=-40V IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 60 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 Transition frequency IC=-1A ; VCE=-5V 18 MHz Collector output capacitance f=1MHz;VCB=10V 160 pF 0.12 µs 1.29 µs 0.36 µs fT COB -1.4 MAX 200 Switching times ton Turn-on time tstg Storage time tf IC=-1.0A; IB1=-IB2=-0.1A RL=20D;VCC=-20V Fall time hFE-1 Classifications D E 60-120 100-200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SB775