SAVANTIC 2SB775

SavantIC Semiconductor
Product Specification
2SB775
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PN package
·Complement to type 2SD895
·Wide area of safe operation
·Large current capability
APPLICATIONS
·85V/6A, AF 35W output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-85
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current (DC)
-6
A
ICM
Collector current-peak
-10
A
PC
Collector power dissipation
60
W
Tj
Junction temperature
150
Tstg
Storage temperature
-40~150
TC=25
SavantIC Semiconductor
Product Specification
2SB775
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;RBE=>
-85
V
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA ;IE=0
-100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-5mA ;IC=0
-6
V
Collector-emitter saturation voltage
IC=-4A ;IB=-0.4A
VBE
Base-emitter on voltage
ICBO
VCEsat
CONDITIONS
MIN
TYP.
UNIT
-2.0
V
IC=-1A;VCE=-5V
-1.5
V
Collector cut-off current
VCB=-40V IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
60
hFE-2
DC current gain
IC=-3A ; VCE=-5V
20
Transition frequency
IC=-1A ; VCE=-5V
18
MHz
Collector output capacitance
f=1MHz;VCB=10V
160
pF
0.12
µs
1.29
µs
0.36
µs
fT
COB
-1.4
MAX
200
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=-1.0A; IB1=-IB2=-0.1A
RL=20D;VCC=-20V
Fall time
hFE-1 Classifications
D
E
60-120
100-200
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SB775