SavantIC Semiconductor Product Specification 2SD895 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SB775 ·Wide area of safe operation APPLICATIONS ·85V/6A, AF 35W output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 85 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 6 A ICM Collector current-peak 10 A PC Collector power dissipation 60 W Tj Junction temperature 150 Tstg Storage temperature -40~150 TC=25 SavantIC Semiconductor Product Specification 2SD895 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE== 85 V V(BR)CBO Collector-base breakdown voltage IC=5mA ;IE=0 100 V V(BR)EBO Emitter-base breakdown voltage IE=5mA ;IC=0 6 V Collector-emitter saturation voltage IC=4A ;IB=0.4A VBE Base-emitter on voltage ICBO VCEsat CONDITIONS MIN TYP. UNIT 2.0 V IC=1A;VCE=5V 1.5 V Collector cut-off current VCB=40V IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 60 hFE-2 DC current gain IC=3A ; VCE=5V 20 Transition frequency IC=1A ; VCE=5V 15 MHz Collector output capacitance f=1MHz;VCB=10V 160 pF 0.20 µs 0.82 µs 3.88 µs fT COB 0.9 MAX 200 Switching times ton Turn-on time tstg Storage time tf IC=1.0A; IB1=-IB2=0.1A RL=20E Fall time hFE-1 Classifications D E 60-120 100-200 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SD895 SavantIC Semiconductor Product Specification 2SD895 Silicon NPN Power Transistors 4