SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD743 2SD743A DESCRIPTION ·With TO-220C package ·Complement to type 2SB703/703A APPLICATIONS ·Designed for use in audio frequency power amplifier ,low speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Maximum absolute ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter 2SD743 UNIT 100 V 80 Open base 2SD743A VEBO VALUE Emitter-base voltage V 100 Open collector 5 V IC Collector current 4 A ICM Collector current-Peak 6 A IB Base current 1 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -50~150 TC=25 THERMAL CHARACTERISTICS SYMBOL R:jc CHARACTERISTICS Thermal resistance junction to case MAX UNIT 3.125 /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD743 2SD743A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SD743 MIN TYP. MAX UNIT 80 IC=10mA; IB=0 2SD743A V 100 V(BR)CBO Collector-base breakdown voltage IC=1.0mA; IE=0 100 V V(BR)EBO Emitter-base breakdown voltage IE=1.0mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 2.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 2.0 V ICBO Collector cut-off current VCB=80V; IE=0 10 µA IEBO Emitter cut-off current VEB=3V; IC=0 10 µA hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE-2 DC current gain IC=0.5A ; VCE=5V 40 Transition frequency IC=0.1A ; VCE=5V;f=1.0MHz 10 fT hFE-2 Classifications S R Q 40-80 60-120 100-200 2 200 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD743 2SD743A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3