SavantIC Semiconductor Product Specification 2SB536 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SD381 ·Low collector saturation voltage APPLICATIONS ·Audio frequency power amplifier ·Low speed power switching PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.5 A ICM Collector current-peak -3.0 A IB Base current -0.3 A PT Total power dissipation Ta=25 1.5 W TC=25 20 Tj Junction temperature 150 Tstg Storage temperature -50~150 SavantIC Semiconductor Product Specification 2SB536 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -2.0 V VBEsat Base-emitter saturation voltage IC=-1A; IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -1.0 µA IEBO Emitter cut-off current VEB=-3V; IC=0 -1.0 µA hFE-1 DC current gain IC=-5mA ; VCE=-5V 25 hFE-2 DC current gain IC=-0.3A ; VCE=-5V 40 COB Output capacitance IE=0 ; VCB=-10V; f=1MHz 35 pF fT Transition frequency IC=-0.1A ; VCE=-5V 40 MHz hFE-2 Classifications N M L K 40-80 60-120 80-160 120-250 2 MIN TYP. MAX -120 UNIT V 250 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 2SB536