SavantIC Semiconductor Product Specification BD142 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High dissipation rating APPLICATIONS ·LF large signal power amplification ·Intended for a wide variety of intermediate power applications. ·Suited for use in audio and inverter circuits at 12V PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 45 V VCEO Collector-emitter voltage Open base 45 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A IB Base current 7 A PT Total power dissipation 117 W Tj Junction temperature -65~200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.5 UNIT /W SavantIC Semiconductor Product Specification BD142 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=200mA ;IB=0 45 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 45 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V Collector-emitter saturation voltage IC=4A ;IB=0.4A 1.1 V VBE Base-emitter on voltage IC=4A;VCE=4V 1.5 V ICEX Collector cut-off current VCE=100V;VBE=-1.5V 2 mA IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE-1 DC current gain IC=4A ; VCE=4V hFE-2 DC current gain IC=0.5A ; VCE=4V VCEsat CONDITIONS 2 MIN 12.5 20 TYP. MAX 160 UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BD142