SavantIC Semiconductor Product Specification BU608 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ·Wide area of safe operation APPLICATIONS ·For TV horizontal deflection output applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 400 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V 7 A IC Collector current PC Collector power dissipation Ta=25 2.5 TC=25 100 W Tj Junction temperature 200 Tstg Storage temperature -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX UNIT 1.75 /W SavantIC Semiconductor Product Specification BU608 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 200 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 400 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 1.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=1A ; VCE=5V 15 hFE-2 DC current gain IC=7A ; VCE=5V 5 2 MIN TYP. MAX UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BU608