ISC BD142

Inchange Semiconductor
Product Specification
BD142
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Low collector saturation voltage
・High dissipation rating
APPLICATIONS
・LF large signal power amplification
・Intended for a wide variety of intermediate
power applications.
・Suited for use in audio and inverter circuits
at 12V
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
45
V
VCEO
Collector-emitter voltage
Open base
45
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
15
A
IB
Base current
7
A
PT
Total power dissipation
117
W
Tj
Junction temperature
-65~200
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
1.5
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
BD142
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=200mA ;IB=0
45
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
45
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7
V
Collector-emitter saturation voltage
IC=4A ;IB=0.4A
1.1
V
VBE
Base-emitter on voltage
IC=4A;VCE=4V
1.5
V
ICEX
Collector cut-off current
VCE=100V;VBE=-1.5V
2
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1
mA
hFE-1
DC current gain
IC=4A ; VCE=4V
hFE-2
DC current gain
IC=0.5A ; VCE=4V
VCEsat
CONDITIONS
2
MIN
12.5
20
TYP.
MAX
160
UNIT
Inchange Semiconductor
Product Specification
BD142
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3