SavantIC Semiconductor Product Specification BU2506AX Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage;high speed APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current (DC) 5 A ICM Collector current (Pulse) 8 A IB Base current (DC) 3 A IBM Base current (Pulse) 5 A Ptot Total power dissipation 45 W TC=25 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification BU2506AX Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 700 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 V VCEsat Collector-emitter saturation voltage IC=3.0A ;IB=0.79 A 5.0 V VBEsat Base-emitter saturation voltage IC=3.0A ;IB=0.79 A 1.1 V ICES Collector cut-off current VCE=BVCES; VBE=0 TC=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 0.1 mA hFE-1 DC current gain IC=0.3 A ; VCE=5V hFE-2 DC current gain IC=3.0A ; VCE=5V 2 MIN TYP. MAX 12 3.8 5.5 7.5 UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BU2506AX