SAVANTIC BU2506AX

SavantIC Semiconductor
Product Specification
BU2506AX
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High voltage;high speed
APPLICATIONS
·For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
7.5
V
IC
Collector current (DC)
5
A
ICM
Collector current (Pulse)
8
A
IB
Base current (DC)
3
A
IBM
Base current (Pulse)
5
A
Ptot
Total power dissipation
45
W
TC=25
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
BU2506AX
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
700
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7.5
V
VCEsat
Collector-emitter saturation voltage
IC=3.0A ;IB=0.79 A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=3.0A ;IB=0.79 A
1.1
V
ICES
Collector cut-off current
VCE=BVCES; VBE=0
TC=125
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=7.5V; IC=0
0.1
mA
hFE-1
DC current gain
IC=0.3 A ; VCE=5V
hFE-2
DC current gain
IC=3.0A ; VCE=5V
2
MIN
TYP.
MAX
12
3.8
5.5
7.5
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BU2506AX