SavantIC Semiconductor Product Specification BU2520AF Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS · For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current (DC) 10 A ICM Collector current (Pulse) 25 A IB Base Collector current (DC) 6 A IBM Base current (Pulse) 9 A Ptot Total power dissipation 45 W Tj Tstg Max.operating junction temperature Storage temperature TC=25 150 -65~150 SavantIC Semiconductor Product Specification BU2520AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 VEBO Emitter-base breakdown voltage IB=1mA ;IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2 A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2 A 1.1 V ICES Collector cut-off current VCE=BVCES; VBE=0 Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 1.0 mA hFE-1 DC current gain IC=0.1A ; VCE=5V hFE-2 DC current gain IC=6A ; VCE=5V Collector capacitance IE=0; f=1MHz;VCB=10V CC CONDITIONS 2 MIN TYP. MAX UNIT V 13.5 V 13 5 7 115 9.5 pF SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 BU2520AF