SavantIC Semiconductor Product Specification BU2520DW Silicon NPN Power Transistors DESCRIPTION ·With TO-247 package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V IC Collector current (DC) 10 A ICM Collector current-peak 25 A IB Base Collector current (DC) 6 A IBM Base current-peak 9 A Ptot Total power dissipation 125 W TC=25 Tj Junction temperature 150 Tstg Storage temperature -65~150 SavantIC Semiconductor Product Specification BU2520DW Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.1 V ICES Collector cut-off current VCE=BVCES; VBE=0 TC=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 300 mA hFE-1 DC current gain IC=1.0A ; VCE=5V hFE-2 DC current gain IC=6A ; VCE=5V VF Diode forward voltage IF=6A CC Collector capacitance f=1MHz;VCB=10V V 13.5 100 V 13 5 7 9.5 2.2 2 UNIT 115 V pF SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BU2520DW