SavantIC Semiconductor Product Specification BU2520D Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current (DC) 10 A ICM Collector current-peak 25 A IB Base current(DC) 6 A IBM Base current-peak 9 A PC Collector power dissipation 125 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification BU2520D Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V(BR)EBO Emitter-base breakdown voltage IB=600mA; IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.3 V ICES Collector cut-off current VCE=ratedVCE; VBE=0 Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 300 mA hFE-1 DC current gain IC=1A ; VCE=5V hFE-2 DC current gain IC=6A ; VCE=5V VF Diode forward voltage IF=6A CC Collector capacitance IE=0 ;VCB=10V;f=1MHz V 13.5 100 V 23 5 7 10 2.2 2 UNIT 115 V pF SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 BU2520D