SavantIC Semiconductor Product Specification BU2525DF Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7.5 A IC Collector current (DC) 12 A ICM Collector current -peak 30 A IB Base Collector current (DC) 8 A IBM Base current -peak 12 A Ptot Total power dissipation 45 W TC=25 Tj Junction temperature 150 Tstg Storage temperature -65~150 SavantIC Semiconductor Product Specification BU2525DF Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=8A ;IB=1.6 A 5.0 V VBEsat Base-emitter saturation voltage IC=8A ;IB=1.6 A 1.1 V ICES Collector cut-off current VCE=BVCES; VBE=0 Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 218 mA hFE-1 DC current gain IC=1.0A ; VCE=5V hFE-2 DC current gain IC=8A ; VCE=5V VF Diode forward voltage CC Collector capacitance 72 TYP. MAX V 13.5 110 V 11 7 9.5 IF=8A 1.6 2.0 IE=0, f=1MHz;VCB=10V 145 2 UNIT 5 V pF SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 BU2525DF