SavantIC Semiconductor Product Specification BU2508D Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current 8 A ICM Collector current-peak 15 A IB Base current 4 A IBM Base current-peak 6 A PC Collector power dissipation 125 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification BU2508D Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0,L=25mH 700 V(BR)EBO Emitter-base breakdown voltage IE=600mA; IC=0 7.5 VCE(sat-1) Collector-emitter saturation voltage IC=4.5A; IB=1.1A 5.0 V VCE(sat-2) Collector-emitter saturation voltage IC=4.5A; IB=1.29A 1.0 V Base-emitter saturation voltage IC=4.5A; IB=1.7A 1.3 V ICES Collector cut-off current VCE=rated; VBE=0 T=125°C 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 140 390 mA hFE-1 DC current gain IC=1A ; VCE=5V 7 13 23 hFE-2 DC current gain IC=4.5A ; VCE=1V 4 5.5 7.5 VF Diode forward voltage IF=4.5A 1.6 2.0 CC Collector capacitance VCB=10V;f=1MHz 80 VBE(sat) 2 TYP. MAX UNIT V 13.5 V V pF SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 BU2508D