SAVANTIC BU2508D

SavantIC Semiconductor
Product Specification
BU2508D
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High voltage;high speed
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
7.5
V
IC
Collector current
8
A
ICM
Collector current-peak
15
A
IB
Base current
4
A
IBM
Base current-peak
6
A
PC
Collector power dissipation
125
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
SavantIC Semiconductor
Product Specification
BU2508D
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0,L=25mH
700
V(BR)EBO
Emitter-base breakdown voltage
IE=600mA; IC=0
7.5
VCE(sat-1)
Collector-emitter saturation voltage
IC=4.5A; IB=1.1A
5.0
V
VCE(sat-2)
Collector-emitter saturation voltage
IC=4.5A; IB=1.29A
1.0
V
Base-emitter saturation voltage
IC=4.5A; IB=1.7A
1.3
V
ICES
Collector cut-off current
VCE=rated; VBE=0
T=125°C
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=7.5V; IC=0
140
390
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
7
13
23
hFE-2
DC current gain
IC=4.5A ; VCE=1V
4
5.5
7.5
VF
Diode forward voltage
IF=4.5A
1.6
2.0
CC
Collector capacitance
VCB=10V;f=1MHz
80
VBE(sat)
2
TYP.
MAX
UNIT
V
13.5
V
V
pF
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
BU2508D