MICROSEMI APTGT30TL60T3G

APTGT30TL60T3G
Three level inverter
Trench + Field Stop IGBT
Power Module
VCES = 600V
IC = 30A @ Tc = 80°C
Application
• Solar converter
• Uninterruptible Power Supplies
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
28 27 26 25
23 22
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
20 19 18
29
16
30
15
31
14
32
13
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 10/11/12 ; 7/8 …
Q1 to Q4 Absolute maximum ratings
ICM
VGE
PD
RBSOA
TC = 25°C
TC = 80°C
TC = 25°C
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TJ = 150°C
Max ratings
600
50
30
60
±20
90
60A @ 550V
Unit
V
A
March, 2009
IC
Parameter
Collector - Emitter Breakdown Voltage
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
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1-7
APTGT30TL60T3G – Rev0
Symbol
VCES
APTGT30TL60T3G
All ratings @ Tj = 25°C unless otherwise specified
Q1 to Q4 Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 30A
Tj = 150°C
VGE = VCE , IC = 400µA
VGE = 20V, VCE = 0V
Min
Typ
5.0
1.5
1.7
5.8
Min
Typ
Max
Unit
250
1.9
µA
6.5
300
V
nA
Max
Unit
V
Q1 to Q4 Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
QG
Gate charge
Tf
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Isc
Short Circuit data
RthJC
VGE = 0V
VCE = 25V
f = 1MHz
VGE=±15V, IC=30A
VCE=300V
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 30A
RG = 10Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 30A
RG = 10Ω
Tj = 25°C
VGE = ±15V
Tj = 150°C
VBus = 300V
IC = 30A
Tj = 25°C
RG = 10Ω
Tj = 150°C
VGE ≤15V ; VBus = 360V
tp ≤ 6µs ; Tj = 150°C
Junction to Case Thermal Resistance
1600
110
50
pF
0.3
µC
110
45
200
ns
40
120
50
ns
250
60
0.16
0.3
0.7
1.05
mJ
150
A
mJ
1.6
°C/W
March, 2009
Td(on)
Tr
Td(off)
Test Conditions
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2-7
APTGT30TL60T3G – Rev0
Symbol Characteristic
APTGT30TL60T3G
CR1 to CR4 diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Err
Reverse Recovery Energy
RthJC
Test Conditions
VR=600V
IF = 20A
VGE = 0V
IF = 20A
VR = 300V
di/dt =1600A/µs
Min
600
Typ
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
20
1.6
1.5
100
150
1.1
Tj = 150°C
Tj = 25°C
Tj = 150°C
2.3
0.23
0.50
Max
150
350
Junction to Case Thermal Resistance
Unit
V
µA
A
2
V
ns
µC
mJ
3.25
°C/W
Max
Unit
V
CR5 & CR6 diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
IF
Maximum Reverse Leakage Current
VR=600V
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Err
Reverse Recovery Energy
RthJC
Test Conditions
IF = 30A
VGE = 0V
IF = 30A
VR = 300V
di/dt =1800A/µs
Min
600
Typ
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
150
350
30
1.6
1.5
100
150
1.5
Tj = 150°C
Tj = 25°C
Tj = 150°C
3.1
0.34
0.75
Junction to Case Thermal Resistance
µA
A
2
V
ns
µC
mJ
2.45
°C/W
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Min
T25 = 298.15 K
TC=100°C
RT =
R25
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
March, 2009
Characteristic
Resistance @ 25°C
T: Thermistor temperature
⎡
⎛ 1
1 ⎞⎤ RT: Thermistor value at T
exp ⎢ B25 / 85 ⎜⎜
− ⎟⎟⎥
T
T
⎝ 25
⎠⎦
⎣
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3-7
APTGT30TL60T3G – Rev0
Symbol
R25
∆R25/R25
B25/85
∆B/B
APTGT30TL60T3G
Thermal and package characteristics
Symbol
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
Min
2500
-40
-40
-40
2.5
Typ
Max
175
125
100
4.7
110
Unit
V
°C
N.m
g
SP3 Package outline (dimensions in mm)
28
17
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
Q1 to Q4 Typical performance curve
80
March, 2009
VCE=300V
D=50%
R G=10Ω
T J=150°C
60
T c =85°C
40
20
Hard
switching
0
0
10
20
30
40
IC (A)
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4-7
APTGT30TL60T3G – Rev0
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
APTGT30TL60T3G
Output Characteristics (VGE=15V)
60
Output Characteristics
60
TJ=25°C
VGE=19V
TJ = 150°C
50
50
VGE=13V
40
TJ=150°C
IC (A)
IC (A)
TJ=125°C
40
30
VGE=15V
30
20
20
10
10
VGE=9V
TJ=25°C
0
0
0.5
1
1.5
VCE (V)
0
2
2.5
0
3
0.5
2
VCE = 300V
VGE = 15V
RG = 10Ω
TJ = 150°C
TJ=25°C
50
1.5
E (mJ)
40
IC (A)
1.5
2
VCE (V)
2.5
3
3.5
Energy losses vs Collector Current
Transfert Characteristics
60
1
30
20
Eoff
1
0.5
TJ=150°C
Eon
10
TJ=25°C
0
0
5
6
7
8
9
10
11
0
12
10
20
VGE (V)
Switching Energy Losses vs Gate Resistance
2.5
VCE = 300V
VGE =15V
IC = 30A
TJ = 150°C
1.5
40
50
60
Reverse Bias Safe Operating Area
70
Eon
60
50
Eoff
IC (A)
E (mJ)
2
30
IC (A)
1
40
30
20
0.5
VGE=15V
TJ=150°C
RG=10Ω
10
Eon
0
0
0
10
20
30
40
50
60
Gate Resistance (ohms)
70
0
100
200
300 400
VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.6
0.9
1.4
1
0.8
0.7
March, 2009
1.2
0.5
0.6
0.3
0.4
0.1
Single Pulse
0.2
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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5-7
APTGT30TL60T3G – Rev0
Thermal Impedance (°C/W)
1.8
APTGT30TL60T3G
CR1 to CR4 Typical performance curve
Forward Characteristic of diode
40
35
30
IF (A)
25
20
15
TJ=150°C
10
5
TJ=25°C
0
0
0.4
0.8
1.2
VF (V)
1.6
2
2.4
Switching Energy Losses vs Gate Resistance
Energy losses vs Collector Current
0.8
0.5
VCE = 300V
IC = 20A
TJ = 150°C
0.6
E (mJ)
E (mJ)
0.375
0.25
0.4
0.125
0.2
0
0
10
30
50
VCE = 300V
RG = 12Ω
TJ = 150°C
0
70
10
20
30
40
IF (A)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
3
2.5
2
1.5
0.9
0.7
0.5
0.3
1
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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March, 2009
0.5
6-7
APTGT30TL60T3G – Rev0
Thermal Impedance (°C/W)
3.5
APTGT30TL60T3G
CR5 & CR6 Typical performance curve
Forward Characteristic of diode
60
50
IF (A)
40
30
20
TJ=150°C
10
TJ=25°C
0
0
0.4
0.8
1.2
1.6
VF (V)
2
2.4
Switching Energy Losses vs Gate Resistance
Energy losses vs Collector Current
1
1
VCE = 300V
VGE =15V
IC = 30A
TJ = 150°C
0.75
E (mJ)
E (mJ)
0.75
0.5
0.5
0.25
0.25
0
0
0
10
20
30
40
50
60
Gate Resistance (ohms)
VCE = 300V
VGE = 15V
RG = 10Ω
TJ = 150°C
0
70
10
20
30
40
50
60
IF (A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
2.5
2
0.9
0.7
1.5
0.5
1
0.3
0.5
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
March, 2009
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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7-7
APTGT30TL60T3G – Rev0
Thermal Impedance (°C/W)
3