MICROSEMI APTGL120TDU120TPG

APTGL120TDU120TPG
Triple Dual Common Source
Trench + Field Stop IGBT4
Power module
VCES = 1200V
IC = 120A @ Tc = 80°C
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
- Low switching losses
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
- Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring
C1
C3
G3
NTC1
NTC2
G1
E1/E2
C2
E1
C5
E3/E4
E3
G5
E5/E6
E5
E2
E4
E6
G2
G4
G6
C4
C6
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Absolute maximum ratings
ICM
VGE
PD
RBSOA
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
1200
140
120
200
±20
517
200A @ 1150V
Unit
V
March, 2010
IC
Parameter
Collector - Emitter Breakdown Voltage
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-5
APTGL120TDU120TPG – Rev 1
Symbol
VCES
APTGL120TDU120TPG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE = 15V
IC = 100A
Tj = 150°C
VGE = VCE , IC = 3.4mA
VGE = 20V, VCE = 0V
Typ
5.2
1.8
2.15
5.8
Min
Typ
Max
Unit
250
2.15
µA
6.5
600
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
QG
Gate charge
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Isc
Short Circuit data
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE= ±15V ; VCE=600V
IC=100A
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 100A
RG = 7.5Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 600V
IC = 100A
RG = 7.5Ω
TJ = 25°C
VGE = ±15V
TJ = 150°C
VBus = 600V
IC = 100A
TJ = 25°C
RG = 7.5Ω
TJ = 150°C
VGE ≤15V ; VBus = 900V
tp ≤10µs ; Tj = 150°C
6.2
0.4
0.35
nF
0.85
µC
130
20
300
ns
45
150
35
ns
350
80
5
10.5
5.5
9.5
mJ
400
A
mJ
Chopper diode ratings and characteristics
Test Conditions
Min
1200
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Err
Reverse Recovery Energy
VR=1200V
IF = 100A
VGE = 0V
IF = 100A
VR = 600V
di/dt =2400A/µs
Typ
Tj = 25°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
120
1.9
1.85
155
Tj = 150°C
Tj = 25°C
300
9.3
Tj = 150°C
Tj = 25°C
Tj = 150°C
20
3.4
8
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Max
250
2.4
Unit
V
µA
A
V
March, 2010
Characteristic
ns
µC
mJ
2-5
APTGL120TDU120TPG – Rev 1
Symbol
VRRM
IRM
IF
APTGL120TDU120TPG
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
IGBT
Diode
To heatsink
M6
2500
-40
-40
-40
3
Max
0.29
0.5
Unit
°C/W
V
175
125
100
5
250
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
R25
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
T: Thermistor temperature
⎡
⎛ 1
1 ⎞⎤ RT: Thermistor value at T
exp ⎢ B25 / 85 ⎜⎜
− ⎟⎟⎥
T
T
⎝ 25
⎠⎦
⎣
SP6-P Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
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3-5
APTGL120TDU120TPG – Rev 1
March, 2010
9 places (3:1)
APTGL120TDU120TPG
Typical Performance Curve
Output Characteristics (VGE=15V)
200
Output Characteristics
200
TJ = 150°C
VGE=19V
150
TJ=25°C
VGE=15V
TJ=150°C
IC (A)
IC (A)
150
100
100
VGE=9V
50
50
0
0
0
1
2
3
4
0
1
VCE (V)
Transfert Characteristics
200
VCE = 600V
VGE = 15V
RG = 7.5 Ω
TJ = 150°C
TJ=25°C
30
E (mJ)
IC (A)
100
Eoff
Err
0
0
5
6
7
8
9
10
11
12
0
13
50
100
150
200
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
20
240
VCE = 600V
VGE =15V
IC = 100A
TJ = 150°C
15
Eon
200
160
Eoff
IC (A)
E (mJ)
4
Eon
20
10
TJ=150°C
50
3
Energy losses vs Collector Current
40
150
2
VCE (V)
10
Err
120
80
VGE=15V
TJ=150°C
RG=7.5Ω
5
40
0
0
0
10
20
30
Gate Resistance (ohms)
40
0
300
600
900
VCE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
March, 2010
IGBT
0.25
0.7
0.2
0.15
0.1
0.05
0.5
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGL120TDU120TPG – Rev 1
Thermal Impedance (°C/W)
0.3
APTGL120TDU120TPG
Forward Characteristic of diode
200
VCE=600V
D=50%
RG=7.5 Ω
TJ=150°C
Tc=75°C
150
120
150
90
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
180
ZCS
60
50
ZVS
30
Hard
switching
25
TJ=150°C
TJ=25°C
0
0
0
100
50
75
100
125
0
150
0.4
IC (A)
0.8
1.2
VF (V)
1.6
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.6
Diode
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGL120TDU120TPG – Rev 1
March, 2010
Rectangular Pulse Duration in Seconds