APTGL120TDU120TPG Triple Dual Common Source Trench + Field Stop IGBT4 Power module VCES = 1200V IC = 120A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring C1 C3 G3 NTC1 NTC2 G1 E1/E2 C2 E1 C5 E3/E4 E3 G5 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings ICM VGE PD RBSOA Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 140 120 200 ±20 517 200A @ 1150V Unit V March, 2010 IC Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGL120TDU120TPG – Rev 1 Symbol VCES APTGL120TDU120TPG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 100A Tj = 150°C VGE = VCE , IC = 3.4mA VGE = 20V, VCE = 0V Typ 5.2 1.8 2.15 5.8 Min Typ Max Unit 250 2.15 µA 6.5 600 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=100A Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 100A RG = 7.5Ω Inductive Switching (150°C) VGE = ±15V VBus = 600V IC = 100A RG = 7.5Ω TJ = 25°C VGE = ±15V TJ = 150°C VBus = 600V IC = 100A TJ = 25°C RG = 7.5Ω TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C 6.2 0.4 0.35 nF 0.85 µC 130 20 300 ns 45 150 35 ns 350 80 5 10.5 5.5 9.5 mJ 400 A mJ Chopper diode ratings and characteristics Test Conditions Min 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy VR=1200V IF = 100A VGE = 0V IF = 100A VR = 600V di/dt =2400A/µs Typ Tj = 25°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C 120 1.9 1.85 155 Tj = 150°C Tj = 25°C 300 9.3 Tj = 150°C Tj = 25°C Tj = 150°C 20 3.4 8 www.microsemi.com Max 250 2.4 Unit V µA A V March, 2010 Characteristic ns µC mJ 2-5 APTGL120TDU120TPG – Rev 1 Symbol VRRM IRM IF APTGL120TDU120TPG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M6 2500 -40 -40 -40 3 Max 0.29 0.5 Unit °C/W V 175 125 100 5 250 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ T T ⎝ 25 ⎠⎦ ⎣ SP6-P Package outline (dimensions in mm) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGL120TDU120TPG – Rev 1 March, 2010 9 places (3:1) APTGL120TDU120TPG Typical Performance Curve Output Characteristics (VGE=15V) 200 Output Characteristics 200 TJ = 150°C VGE=19V 150 TJ=25°C VGE=15V TJ=150°C IC (A) IC (A) 150 100 100 VGE=9V 50 50 0 0 0 1 2 3 4 0 1 VCE (V) Transfert Characteristics 200 VCE = 600V VGE = 15V RG = 7.5 Ω TJ = 150°C TJ=25°C 30 E (mJ) IC (A) 100 Eoff Err 0 0 5 6 7 8 9 10 11 12 0 13 50 100 150 200 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 20 240 VCE = 600V VGE =15V IC = 100A TJ = 150°C 15 Eon 200 160 Eoff IC (A) E (mJ) 4 Eon 20 10 TJ=150°C 50 3 Energy losses vs Collector Current 40 150 2 VCE (V) 10 Err 120 80 VGE=15V TJ=150°C RG=7.5Ω 5 40 0 0 0 10 20 30 Gate Resistance (ohms) 40 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 March, 2010 IGBT 0.25 0.7 0.2 0.15 0.1 0.05 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGL120TDU120TPG – Rev 1 Thermal Impedance (°C/W) 0.3 APTGL120TDU120TPG Forward Characteristic of diode 200 VCE=600V D=50% RG=7.5 Ω TJ=150°C Tc=75°C 150 120 150 90 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 180 ZCS 60 50 ZVS 30 Hard switching 25 TJ=150°C TJ=25°C 0 0 0 100 50 75 100 125 0 150 0.4 IC (A) 0.8 1.2 VF (V) 1.6 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 Diode 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGL120TDU120TPG – Rev 1 March, 2010 Rectangular Pulse Duration in Seconds