BVDSS = 200 V RDS(on) typ = 0.145Ω HFW640 / HFI640 ID = 18 A 200V N-Channel MOSFET D2-PAK I2-PAK 2 FEATURES 1 1 3 Originative New Design 2 3 HFW640 Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFI640 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.145 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 200 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 18 A Drain Current – Continuous (TC = 100℃) 11.4 A IDM Drain Current – Pulsed 72 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 250 mJ IAR Avalanche Current (Note 1) 18 A EAR Repetitive Avalanche Energy (Note 1) 13.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TA = 25℃) 3.13 W Power Dissipation (TC = 25℃) - Derate above 25℃ 139 W 1.11 W/℃ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ℃ (Note 1) Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 0.9 Rθ JA Junction-to-Ambient* -- 40 RθJA Junction-to-Ambient -- 62.5 Units ℃/W * When mounted on the minimum pad size recommended (PCB Mount) ◎ SEMIHOW REV.A0,Mar 2008 HFW640 / HFI640 Mar 2008 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.0 -- 4.0 V Static Drain-Source On-Resistance VGS = 10 V, ID = 9.0 A -- 0.145 0.18 Ω VGS = 0 V, ID = 250 ㎂ 200 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.2 -- V/℃ VDS = 200 V, VGS = 0 V -- -- 1 ㎂ VDS = 160 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 1300 1700 ㎊ -- 175 230 ㎊ -- 26 34 ㎊ -- 20 40 ㎱ -- 150 300 ㎱ -- 150 300 ㎱ -- 110 220 ㎱ -- 37 48 nC -- 5.5 -- nC -- 13 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 100 V, ID = 18 A, RG = 25 Ω (Note 4,5) VDS = 160 V, ID = 18 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 18 ISM Pulsed Source-Drain Diode Forward Current -- -- 72 VSD Source-Drain Diode Forward Voltage IS = 18 A, VGS = 0 V -- -- 1.5 V trr Reverse Recovery Time -- 200 -- ㎱ Qrr Reverse Recovery Charge IS = 18 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 1.50 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1.16mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤18A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Mar 2008 HFW640 / HFI640 Electrical Characteristics TC=25 °C HFW640 / HFI640 Typical Characteristics VGS 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V Bottom: 5.0V ID, Drain Current [A] ID, Drain Current [A] Top: ※ Notes 1. 250us Pulse Test 2. T c=25℃ ※ Notes 1. VDS=40V 2. 250us Pulse Test VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics RDS(ON)[Ω], Drain-Source On-Resistance IDR, Reverse Drain Current [A] Figure 2. Transfer Characteristics ※ Notes 1. VGS=0V 2. 250us Pulse Test ※ Notes : T J=25℃ ID, Drain Current [A] VSD, Source-Drain Voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 2500 Ciss 1500 Coss 1000 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 500 Crss VGS, Gate-Source Voltage [V] 2000 Capacitances [pF] 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 40V VDS = 100V 10 VDS = 160V 8 6 4 2 * Note : ID = 18.0 A 0 -1 10 0 10 1 10 0 0 8 16 24 32 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 40 ◎ SEMIHOW REV.A0,Mar 2008 (continued) 1.2 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage HFW640 / HFI640 Typical Characteristics 1.1 1.0 * Note : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ∗ Note : 1. VGS = 10 V 2. ID = 1.0 A 0.5 0.0 -100 200 -50 0 10-1 200 16 ID, Drain Current [A] 100 * Notes : 1. TC = 25 oC 12 8 4 2. TJ = 150 oC 3. Single Pulse 10-2 100 101 0 25 102 50 75 100 125 150 TC, Case Temperature [ ℃] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 0 10 D=0.5 Zθ JC(t), Thermal Response ID, Drain Current [A] 100 µs 1 ms 10 ms 100 ms DC 10 150 20 Operation in This Area is Limited by R DS(on) 1 100 Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 102 50 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] 0.2 ※ Notes : 1. Zθ JC(t) = 0.9 ℃/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC(t) -1 10 0.1 0.05 0.02 0.01 PDM t1 single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 t2 0 10 1 10 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Mar 2008 HFW640 / HFI640 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,Mar 2008 HFW640 / HFI640 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Mar 2008 HFW640 / HFI640 Package Dimension ◎ SEMIHOW REV.A0,Mar 2008 HFW640 / HFI640 Package Dimension ◎ SEMIHOW REV.A0,Mar 2008