BVDSS = 250 V RDS(on) typ = 0.36 Ω HFS634 ID = 8.1 A 250V N-Channel MOSFET TO-220F FEATURES Originative New Design 1 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.36 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 250 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 8.1* A Drain Current – Continuous (TC = 100℃) 5.1* A IDM Drain Current – Pulsed 32.4* A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 200 mJ IAR Avalanche Current (Note 1) 8.1 A EAR Repetitive Avalanche Energy (Note 1) 7.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ 38 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds (Note 1) 0.3 W/℃ -55 to +150 ℃ 300 ℃ * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 3.29 RθJA Junction-to-Ambient -- 62.5 Units ℃/W ◎ SEMIHOW REV.A0,Dec 2005 HFS634 Dec 2005 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.0 -- 4.0 V Static Drain-Source On-Resistance VGS = 10 V, ID = 4.05 A -- 0.36 0.45 Ω 250 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.27 -- V/℃ VDS = 250 V, VGS = 0 V -- -- 1 ㎂ VDS = 200 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 ㎂ IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 780 1000 ㎊ -- 95 125 ㎊ -- 20 25 ㎊ -- 15 30 ㎱ -- 75 150 ㎱ -- 100 200 ㎱ -- 65 130 ㎱ -- 30 38 nC -- 4.0 -- nC -- 15 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 125 V, ID = 8.1 A, RG = 25 Ω (Note 4,5) VDS = 200 V, ID = 8.1 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 8.1 ISM Pulsed Source-Drain Diode Forward Current -- -- 32.4 VSD Source-Drain Diode Forward Voltage IS = 8.1 A, VGS = 0 V -- -- 1.5 V trr Reverse Recovery Time -- 170 -- ㎱ Qrr Reverse Recovery Charge IS = 8.1 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 0.9 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=4.9mH, IAS=8.1A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤8.1A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Dec 2005 HFS634 Electrical Characteristics TC=25 °C HFS634 Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 1500 Ciss 900 Coss 600 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 300 Crss VDS = 50V VGS, Gate-Source Voltage [V] 1200 Capacitances [pF] 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 125V 10 VDS = 200V 8 6 4 2 ※ Note : ID = 8.1 A 0 -1 10 0 10 1 10 0 0 5 10 15 20 25 30 35 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,Dec 2005 HFS634 Typical Characteristics (continued) Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 2 10 10 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 10 1 ms 10 ms DC 0 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 4 0 25 2 1 10 6 2 -1 10 10 10 50 75 100 125 150 TC, Case Temperature [ ℃] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D=0.5 Zθ JC(t), Thermal Response ID, Drain Current [A] 8 100 µs 1 0 10 0.2 ※ Notes : 1. Zθ JC(t) = 3.29 ℃/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC(t) 0.1 0.05 -1 10 0.02 PDM 0.01 t1 single pulse t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Dec 2005 HFS634 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,Dec 2005 HFS634 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Dec 2005 HFS634 Package Dimension TO-220F ±0.20 ±0.20 0 0.2 2.54±0.20 6.68±0.20 0.70±0.20 12.42±0.20 3.30±0.20 2.76±0.20 1.47max 9.75±0.20 15.87±0.20 φ 8± 1 . 3 0.80±0.20 0.50±0.20 2.54typ 2.54typ ◎ SEMIHOW REV.A0,Dec 2005