BVDSS = 75 V RDS(on) typ= 24mΩ HFS35N75 ID = 35 A 75V N-Channel MOSFET TO-220F FEATURES Originative New Design 1 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.024 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 75 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 35* A Drain Current – Continuous (TC = 100℃) 25* A IDM Drain Current – Pulsed 140* A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 580 mJ IAR Avalanche Current (Note 1) 35 A EAR Repetitive Avalanche Energy (Note 1) 12 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ 40 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds (Note 1) 0.32 W/℃ -55 to +175 ℃ 300 ℃ * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter Typ. Max. RθJC Junction-to-Case -- 3.75 RθJA Junction-to-Ambient -- 62.5 Units ℃/W ◎ SEMIHOW REV.A0,Dec 2008 HFS35N75 Dec 2008 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.0 -- 4.0 V Static Drain-Source On-Resistance VGS = 10 V, ID = 17.5 A -- 0.024 0.03 Ω VGS = 0 V, ID = 250 ㎂ 75 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.06 -- V/℃ VDS = 75 V, VGS = 0 V -- -- 1 ㎂ VDS = 60 V, TC = 150℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature /ΔTJ Coefficient IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 ㎁ -- 1600 2100 ㎊ -- 600 780 ㎊ -- 90 120 ㎊ -- 25 50 ㎱ -- 120 240 ㎱ -- 80 160 ㎱ -- 85 170 ㎱ -- 40 52 nC -- 10 -- nC -- 17 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 37.5 V, ID = 35 A, RG = 25 Ω (Note 4,5) VDS = 60 V, ID = 35 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 35 ISM Pulsed Source-Drain Diode Forward Current -- -- 140 VSD Source-Drain Diode Forward Voltage IS = 35 A, VGS = 0 V -- -- 1.5 V trr Reverse Recovery Time -- 60 -- ㎱ Qrr Reverse Recovery Charge IS = 35 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 90 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=635uH, IAS=35A, VDD=25V, RG=25Ω, Starting TJ =25°C 3. ISD≤35A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Dec 2008 HFS35N75 Electrical Characteristics TC=25 °C HFS35N75 Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 2000 Coss 1500 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 1000 Crss 500 VGS, Gate-Source Voltage [V] Capacitances [pF] 2500 VDS = 15V VDS = 37.5V 10 VDS = 60V 8 6 4 2 * Note : ID = 35 A 0 -1 10 0 0 10 1 10 0 10 20 30 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 50 ◎ SEMIHOW REV.A0,Dec 2008 HFS35N75 Typical Characteristics (continued) RDS(ON), (Normalized) Drain-Source On-Resistance 3.0 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 17.5 A 0.5 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 35 Operation in This Area is Limited by R DS(on) 102 30 100 µs ID, Drain Current [A] 100 10-1 * Notes : 1. TC = 25 oC 10-2 100 25 20 15 10 5 2. TJ = 175 oC 3. Single Pulse 101 0 25 102 50 75 100 125 150 175 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D=0.5 ZθJC(t), Thermal Response ID, Drain Current [A] 1 ms 10 ms 100 ms DC 101 100 0.2 * Notes : 1. ZθJC(t) = 3.75 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.1 0.05 -1 10 0.02 PDM 0.01 t1 single pulse -2 10 10-5 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Dec 2008 HFS35N75 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,Dec 2008 HFS35N75 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Dec 2008 HFS35N75 Package Dimension TO-220F ±0.20 ±0.20 0 0.2 2.54±0.20 6.68±0.20 0.70±0.20 12.42±0.20 3.30±0.20 2.76±0.20 1.47max 9.75±0.20 15.87±0.20 φ 8± 1 . 3 0.80±0.20 0.50±0.20 2.54typ 2.54typ ◎ SEMIHOW REV.A0,Dec 2008