1N4148 SILICON EPITAXIAL PLANAR DIODE Fast Switching Diode This diode is also available in MiniMELF case with the type designation LL4148 Max. 0.5 Max. 0.45 Min. 27.5 Max. 1.9 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand Black Cathode Band XXX Black Part No. Max. 3.9 ST XXX Min. 27.5 Min. 27.5 Glass Case DO-34 Dimensions in mm Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Max. 2.9 Symbol Value Unit Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V IF(AV) 200 mA IFSM 0.5 1 4 A Ptot 500 Average Rectified Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 µs Power Dissipation 1) mW Junction Temperature Tj 200 O Storage Temperature Range TS - 65 to + 200 O 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/09/2007 C C 1N4148 Characteristics at Tj = 25 OC Parameter Symbol Min. Max. Unit VF - 1 V IR IR IR - 25 5 50 nA µA µA V(BR)R V(BR)R 100 75 - V V Capacitance at VF = VR = 0 Ctot - 4 pF Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz Vfr - 2.5 V Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω trr - 4 ns RthA - 0.35 1) K/mW ηV 0.45 - - Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Reverse Breakdown Voltage at IR = 100 µA at IR = 5 µA Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V Vo 2nF 5K ~ ~ ~ VRF =2V Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. 60 1) Rectification Efficiency Measurement Circuit SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/09/2007 1N4148 Dynamic forward resistance versus forward current Forward characteristics mA 10 1N 4148 1N 4148 3 10 4 Tj=25 oC f=1KHz 5 2 10 2 o Tj=100 C iF 10 3 o Tj=25 C rf 10 5 2 10 2 5 1 2 10 10 -1 5 2 10 -2 0 1 2V 1 10 -1 10 -2 1 10 2 mA 10 VF IF Admissible power dissipation versus ambient temperature Relative capacitance versus reverse voltage Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature mW 1000 1N 4148 Tj=25 oC f=1MHz 900 1.1 800 P tot 1N 4148 Ctot(VR ) Ctot(0V) 700 1.0 600 500 0.9 400 300 0.8 200 100 0.7 0 0 200 oC 100 0 0 Tamb 2 4 6 8 10 V VR SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/09/2007 1N4148 Leakage current versus junction temperature nA 10 4 1N 4148 5 2 10 3 IR 5 2 10 2 5 2 10 5 VR=20V 2 1 0 o 200 C 100 Tj Admissible repetitive peak forward current versus pulse duration A 100 Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature 1N 4148 v=tp/T I 5 4 3 IFRM 2 tp 10 IFRM T=1/fp t v=0 T 5 4 3 0.1 2 0.2 1 0.5 5 4 3 2 0.1 10 -5 2 5 10 -4 2 5 10 -3 2 5 10 -2 2 5 10 -1 2 5 1 2 5 10 s tp SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/09/2007